Ferroelectric Memory Company (FMC), established in 2016 and located in Dresden, Germany, specializes in advanced non-volatile memory solutions using ferroelectric hafnium oxide (HfO2) technology. The company has developed patented technology that converts standard CMOS transistors and capacitors into ferroelectric field-effect transistors (FeFETs) and capacitors (FeCAPs). This innovation allows for the creation of fast, low-power, and durable non-volatile memory devices suitable for applications in AI, IoT, edge computing, data centers, and embedded systems.

FMC's flagship products include ferroelectric non-volatile random access memory (Fe-NVRAM) devices, which combine the speed of DRAM with the non-volatility of flash memory. These devices retain data without power and significantly reduce energy consumption. The company collaborates with major semiconductor firms and has received investment from notable venture capital firms, targeting sectors that require advanced memory solutions. FMC is positioned as a key innovator in next-generation semiconductor memory technology.